Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25100BFH User Manual
Page 4
ZXTP25100BFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-140
-165
V
I
C
= -100
A
Collector-emitter
breakdown voltage
(forward blocking)
BV
CEX
-140
-165
V
I
C
= -100
A,
R
BE
< 1k
⍀ or
-0.25V < V
BE
< 1V
Collector-emitter
breakdown voltage (base
open)
BV
CEO
-100
-125
V
I
C
= -10mA
Emitter-collector
breakdown voltage
(reverse blocking)
BV
ECX
-7
8.2
V
I
E
= -100
A,
R
BC
< 1k
⍀ or
-0.25V < V
BC
< 0.25V
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
A
Collector cut-off current
I
CBO
<-1
-50
-20
nA
A
V
CB
= -112V
V
CB
= -112V, T
AMB
= 100°C
Collector emitter cut-off
current
I
CEX
-
-100
nA
V
CE
= -112V;
R
BE
< 1k
⍀ or
-0.25V < V
BE
< 1V
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter
saturation voltage
V
CE(sat)
-60
-90
mV
I
C
= -0.5A, I
B
= -50mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
-240
-350
mV
I
C
= -0.5A, I
B
-100
-130
mV
I
C
= -1A, I
B
= -100mA
-215
-295
mV
I
C
= -2A, I
B
= -200mA
Base-emitter saturation
voltage
V
BE(sat)
-900
-1000
mV
I
C
= -2A, I
B
= -200mA
Base-emitter turn-on
voltage
V
BE(on)
-830
-950
mV
I
C
= -2A, V
CE
= -2V
Static forward current
transfer ratio
h
FE
100
200
300
I
C
= -10mA, V
CE
= -2V
55
105
I
C
= -1A, V
CE
= -2V
15
25
I
C
= -2A, V
CE
= -2V
Transition frequency
f
T
200
MHz
I
C
= -100mA, V
CE
= -5V
f
= 100MHz
Output capacitance
C
OBO
15
25
pF
V
CB
= -10V, f
= 1MHz
Turn-on time
t
(on)
31
ns
V
CC
= -10V, I
C
= -500mA,
I
B1
= I
B2
= -50mA
Turn-off time
t
(off)
384
ns