Rainbow Electronics AT45DB161D - Manual (Page 24)

24
3500O–DFLASH–11/2012
AT45DB161D
14.2 Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which
commands can be executed at what times.
Group A commands consist of:
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
Group B commands consist of:
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
Group C commands consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should
not be started. However, during the internally self-timed portion of Group B commands, any command in Group C
can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice
versa. Finally, during the internally self-timed portion of a Group D command, only the Status Register Read
command should be executed.